PBSS5350X,115 datasheet

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Маркировка

PBSS5350X,115
Производитель

NXP Semiconductors
Описание

NXP Semiconductors PBSS5350X,115 Collector- Emitter Voltage Vceo Max: 50 V Configuration: Single Current - Collector (ic) (max): 3A Current - Collector Cutoff (max): 100nA Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 1A, 2V Emitter- Base Voltage Vebo: 5 V Frequency - Transition: 100MHz ID_COMPONENTS: 1949648 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: 3 A Maximum Operating Frequency: 100 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab) Power - Max: 1.6W Power Dissipation: 1600 mW Series: - Transistor Polarity: PNP Transistor Type: PNP Vce Saturation (max) @ Ib, Ic: 390mV @ 300mA, 3A Voltage - Collector Emitter Breakdown (max): 50V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Base Voltage VCBO: 50 V Collector- Emitter Voltage VCEO Max: 50 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 3 A Gain Bandwidth Product fT: 100 MHz DC Collector/Base Gain hfe Min: 200 at 0.1 A at 2 V, 200 at 0.5 A at 2 V, 200 at 1 A at 2 V, 130 at 2 A at 2 V, 80 at 3 A at 2 V DC Current Gain hFE Max: 200 at 0.1 A at 2 V Maximum Power Dissipation: 1600 mW Factory Pack Quantity: 1000 Part # Aliases: PBSS5350X T/R Other Names: 568-4170-2, 934055948115, PBSS5350X T/R
Количество страниц

12 шт.
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